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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N5344 DESCRIPTION *High Collector-Emitter Sustaining Voltage: VCEO(SUS)= -250V(Min) *High Switching Speed *High Current-Gain Bandwidth Product: fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS *Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PD TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE -250 -250 -5 -1.0 -0.5 40 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4.38 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEX IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= -10mA ; IB= 0 IC= -1A; IB= -0.2A IC= -1A; IB= -0.2A VCB= -250V; IE= 0 VCE= -225V; VBE(off)= -1.5V VCE= -225V; VBE(off)= -1.5V,TC= 150 VEB= 5V; IC= 0 IC= -0.5A ; VCE= -5V IC= -1A ; VCE= -5V IC= -0.1A ; VCE= -20V IE= 0; VCB= -10V 25 7 60 MIN -250 2N5344 MAX UNIT V -3.0 -1.5 -0.1 -0.1 -1.0 -0.1 100 V V mA mA mA MHz 200 pF Switching times ton toff Turn-On Time IC= -0.5A, IB1= -IB2= -0.05A; VCC= -100V Turn-Off Time 0.7 0.2 s s isc Websitewww.iscsemi.cn 2 |
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